Other articles related with "interface trap density":
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  Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations
    Chin. Phys. B   2016 Vol.25 (8): 87305-087305 [Abstract] (600) [HTML 1 KB] [PDF 1174 KB] (558)
126701 Guan He (关赫), Lv Hong-Liang (吕红亮), Guo Hui (郭辉), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Wu Li-Fan (武利翻)
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    Chin. Phys. B   2015 Vol.24 (12): 126701-126701 [Abstract] (584) [HTML 1 KB] [PDF 305 KB] (413)
118504 Yun Quan-Xin (云全新), Li Ming (黎明), An Xia (安霞), Lin Meng (林猛), Liu Peng-Qiang (刘朋强), Li Zhi-Qiang (李志强), Zhang Bing-Xin (张冰馨), Xia Yu-Xuan (夏宇轩), Zhang Hao (张浩), Zhang Xing (张兴), Huang Ru (黄如), Wang Yang-Yuan (王阳元)
  Impact of nitrogen plasma passivation on the interface of germanium MOS capacitor
    Chin. Phys. B   2014 Vol.23 (11): 118504-118504 [Abstract] (623) [HTML 1 KB] [PDF 586 KB] (743)
76701 Liu Chen (刘琛), Zhang Yu-Ming (张玉明), Zhang Yi-Men (张义门), Lü Hong-Liang (吕红亮)
  Interfacial characteristics of Al/Al2O3/ZnO/n-GaAs MOS capacitor
    Chin. Phys. B   2013 Vol.22 (7): 76701-076701 [Abstract] (544) [HTML 1 KB] [PDF 287 KB] (1362)
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