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Other articles related with "interface trap density":
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87305 |
Hao Xu(徐昊), Hong Yang(杨红), Wei-Chun Luo(罗维春), Ye-Feng Xu(徐烨峰), Yan-Rong Wang(王艳蓉), Bo Tang(唐波), Wen-Wu Wang(王文武), Lu-Wei Qi(祁路伟), Jun-Feng Li(李俊峰), Jiang Yan(闫江), Hui-Long Zhu(朱慧珑), Chao Zhao(赵超), Da-Peng Chen(陈大鹏), Tian-Chun Ye(叶甜春) |
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Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations |
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Chin. Phys. B
2016 Vol.25 (8): 87305-087305
[Abstract]
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[HTML 1 KB]
[PDF 1174 KB]
(558)
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126701 |
Guan He (关赫), Lv Hong-Liang (吕红亮), Guo Hui (郭辉), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Wu Li-Fan (武利翻) |
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Interfacial and electrical characteristics of a HfO2/n-InAlAs MOS-capacitor with different dielectric thicknesses |
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Chin. Phys. B
2015 Vol.24 (12): 126701-126701
[Abstract]
(584)
[HTML 1 KB]
[PDF 305 KB]
(413)
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118504 |
Yun Quan-Xin (云全新), Li Ming (黎明), An Xia (安霞), Lin Meng (林猛), Liu Peng-Qiang (刘朋强), Li Zhi-Qiang (李志强), Zhang Bing-Xin (张冰馨), Xia Yu-Xuan (夏宇轩), Zhang Hao (张浩), Zhang Xing (张兴), Huang Ru (黄如), Wang Yang-Yuan (王阳元) |
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Impact of nitrogen plasma passivation on the interface of germanium MOS capacitor |
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Chin. Phys. B
2014 Vol.23 (11): 118504-118504
[Abstract]
(623)
[HTML 1 KB]
[PDF 586 KB]
(743)
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76701 |
Liu Chen (刘琛), Zhang Yu-Ming (张玉明), Zhang Yi-Men (张义门), Lü Hong-Liang (吕红亮) |
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Interfacial characteristics of Al/Al2O3/ZnO/n-GaAs MOS capacitor |
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Chin. Phys. B
2013 Vol.22 (7): 76701-076701
[Abstract]
(544)
[HTML 1 KB]
[PDF 287 KB]
(1362)
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